The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Mar. 14, 2005
Applicant:
Arno Neidig, Plankstadt, DE;
Inventor:
Arno Neidig, Plankstadt, DE;
Assignee:
IXYS Semiconductor GmbH, Lampertheim, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a power semiconductor component produced in a planar technique, a near-surface structure having at least one depression is formed in a surface region of an edge termination adjacent a main surface of the semiconductor body. The structure lies inside a space charge region formed when a voltage is applied at a junction between semiconductor regions of opposite conduction type. Dielectric material may fill the depression and form a passivation layer on the surface region. The depression may be an annular trench having a width to depth ratio ≦1. Alternatively, the structure may be waffle-shaped with multiple depressions.