The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jan. 29, 2003
Jung-hoon Shin, Daejon, KR;
Se-young Seo, Daejon, KR;
Hak-seung Han, Daejon, KR;
Luxpert Technologies Co., Ltd., Seoul, KR;
Abstract
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon nanoclusters and rare earth elements are co-doped. The average size of the silicon nanoclusters is less than 3 nm and the concentration of the rare earth elements is less than 0.1 atomic %. The ratio of the rare earth element concentration to that of silicon nanoclusters is controlled to range from 1 to 10 in the thin film. The thin film emits light by exciting the rare earth elements through electron-hole recombinations in the silicon nanoclusters. According to the present invention, the conditions such as the size and concentration of the silicon nanoclusters, the concentration of the rare earth element, and their concentration ratio are specifically optimized to fabricate optical devices with better performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile