The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2006

Filed:

May. 13, 2004
Applicants:

Bang Lin Lee, Gyeonggi-Do, KR;

Eun Jeong Jeong, Gyeonggi-Do, KR;

Kook Min Han, Gyeonggi-Do, KR;

IN Nam Kang, Gyeonggi-Do, KR;

Inventors:

Bang Lin Lee, Gyeonggi-Do, KR;

Eun Jeong Jeong, Gyeonggi-Do, KR;

Kook Min Han, Gyeonggi-Do, KR;

In Nam Kang, Gyeonggi-Do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a composite-structured organic semiconductor polymer for an organic thin film transistor which contains quinoxaline rings in the backbone of the polymer. According to the organic semiconductor polymer, since quinoxaline rings having n-type semiconductor characteristics, such as high electron affinity, are incorporated into a polythiophene having p-type semiconductor characteristics, the organic semiconductor polymer simultaneously exhibits both p-type and n-type semiconductor characteristics. In addition, the polythienylquinoxaline derivative exhibits high solubility in organic solvents, co-planarity and stability in air. Furthermore, when the polythienylquinoxaline derivative is used as an active layer of an organic thin film transistor, the organic thin film transistor exhibits a high charge carrier mobility and a low off-state leakage current.


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