The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Dec. 30, 2003
Jae Won Han, Gyeonggi-do, KR;
Jae Won Han, Gyeonggi-do, KR;
DongbuAnam Semiconductor Inc., Seoul, KR;
Abstract
A method of fabricating a metal interconnection of semiconductor device is disclosed. A metal interconnection fabricating method according to the present invention comprises the steps of depositing a metal layer on a substrate having a predetermined structure; patterning a bottom metal layer through etching the metal layer; forming a pad electrically connecting the bottom metal layer to a scribe area; forming an insulating layer on the substrate including the bottom metal layer; forming a via hole and a trench, in which an upper metal layer is formed, on the insulating layer, the via hole connecting the bottom metal layer with the upper metal layer; forming a plating layer by means of electroplating; and performing a planarization process for the plating layer. Accordingly, the present invention needs not a separate seed layer because the bottom metal layer is used as a seed layer. In addition, the present invention can enhance device reliability by reducing electro-migration and stress-migration because the copper is uniformly grown from the bottom in one direction thereby completely filling the contact hole.