Methods of forming mim type capacitors by forming upper and lower electrode layers in a recess that exposes a source/drain region of a transistor and mim capacitors so formed

Abstract

A MIM capacitor can be formed by forming an insulating layer on a source/drain region of a transistor. A first pattern is formed on the insulating layer. A recess is formed in the insulating layer using the first pattern, wherein the recess exposes the source/drain region. A first electrode layer is formed in the recess on the source/drain region. A dielectric layer and a second electrode layer are formed on the first electrode layer in the recess. A second pattern is formed on the second electrode layer. The MIM capacitor is formed by removing a portion of the second electrode and the dielectric layer using the second pattern.