The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Dec. 22, 2004
Kazuhiro Yoshida, Shiga-ken, JP;
Kazuhiro Yoshida, Shiga-ken, JP;
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
A method for efficiently manufacturing a semiconductor device, the semiconductor device having an FET and a pn junction diode provided on the same semiconductor substrate, the FET having a Schottky junction for a gate electrode and a gate recess, includes the steps of forming a channel layer, a first etching stopper layer, an n-type common layer, a second etching stopper layer, a p-type layer, and a third etching stopper layer on the semiconductor substrate in that order; etching away the p-type layer and the third etching stopper layer in specific regions; simultaneously forming a source electrode, a drain electrode, a cathode; forming a mask having an opening for forming a gate recess and a gate electrode and an opening for forming an anode; forming the gate recess by etching while the third etching stopper layer prevents the p-type layer from being etched; and simultaneously forming the gate electrode and the anode.