The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jul. 24, 2003
Applicant:
Naokatsu Ikegami, Tokyo, JP;
Inventor:
Naokatsu Ikegami, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes the steps of, (1) preparing an SOI substrate, (2) forming a metal layer on the SOI substrate, (3) performing a first anneal treatment to the metal layer at a relatively low temperature in order to transform the metal layer to a first silicide layer, (4) forming an insulating layer on the first silicide layer, and (5) forming a contact hole, which reaches the first silicide layer, in the insulating layer; and (6) performing a second anneal treatment to the silicide layer at a relatively high temperature in order to transform the first silicide layer to a second silicide layer.