The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Oct. 26, 2000
Applicants:
Masafumi Kokura, Kashiba, JP;
Yoshiharu Kataoka, Suita, JP;
Takayuki Shimada, Yamatokooriyama, JP;
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 19/00 (2006.01); G02F 1/133 (2006.01); G02F 1/136 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin film transistor (TFT) is formed on an insulating substrate, and a photosensitive resin film as an interlayer insulating film is formed so as to cover the TFT. Contact holes are formed in the photosensitive resin, and smooth concave and convex portions are provided on an upper surface of the resin. A film including molybdenum nitride (MoN) and a reflective pixel electrode film are successively laminated on the photosensitive resin. The nitrogen content in the MoN film may be between 5 atomic % and 30 atomic % inclusive.