The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jun. 18, 2004
Kyong M. Park, Westlake Village, CA (US);
Alexander F. Spivak, Thousand Oaks, CA (US);
Kyong M. Park, Westlake Village, CA (US);
Alexander F. Spivak, Thousand Oaks, CA (US);
Kavlico Corporation, Moorpart, CA (US);
Abstract
A pressure sensor system involves a semi-conductive diaphragm electrode overlying a cavity in a semiconductor chip, with the center of the diaphragm secured to a mesa extending upwardly from the cavity. A second electrode is implemented by a heavily doped raised ring between the mesa and the periphery of the chip at the ring of maximum deflection of the diaphragm. The raised ring electrode is heavily doped with one polarity, with light doping near the base of the raised area, and the remainder of the cavity is heavily doped with the opposite polarity. The plot of Linearity Error versus width of the ring electrode, has a minimum, and the width of the ring electrode and related constructional features are selected to conform to the minimum point of the linearity function. The reference capacitor is arcuate in configuration and extends part way around and in immediate proximity to the sensor diaphragm.