The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Sep. 27, 2002
Jennifer F. Huckaby, Raleigh, NC (US);
Torsten Partsch, Chapel Hill, NC (US);
Johnathan Edmonds, Cary, NC (US);
Leonel R. Nino, Cary, NC (US);
Jennifer F. Huckaby, Raleigh, NC (US);
Torsten Partsch, Chapel Hill, NC (US);
Johnathan Edmonds, Cary, NC (US);
Leonel R. Nino, Cary, NC (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method of self-repair for a DRAM integrated circuit includes internally generating a bit pattern and writing the pattern to an array of memory cells within the integrated circuit. The DRAM integrated circuit reads from the array and internally compares the read data with the generated pattern to determine addresses for failed memory cells. The DRAM integrated circuit sets internal soft fuses that record the addresses of the failed memory cells and provide substitute memory cells for the failed memory cells from a redundant memory portion of the array. The self-repair process occurs each time the DRAM integrated circuit is powered up, thus permitting the integrated circuit to adapt to failures when installed in electronic devices and lessening the need for repair during manufacturing.