The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Mar. 05, 2004
Kyohta Koetsuka, Kanagawa, JP;
Tsuyoshi Imamura, Kanagawa, JP;
Sumio Kamoi, Tokyo, JP;
Noriyuki Kamiya, Kanagawa, JP;
Kenji Narita, Kanagawa, JP;
Kenzo Tatsumi, Kanagawa, JP;
Mieko Kakegawa, Kanagawa, JP;
Kyohta Koetsuka, Kanagawa, JP;
Tsuyoshi Imamura, Kanagawa, JP;
Sumio Kamoi, Tokyo, JP;
Noriyuki Kamiya, Kanagawa, JP;
Kenji Narita, Kanagawa, JP;
Kenzo Tatsumi, Kanagawa, JP;
Mieko Kakegawa, Kanagawa, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A developer carrier for an SLIC developing system includes a developing sleeve and a magnetic roll having a plurality of magnetic poles. A narrow development nip is formed by narrowing the width of a development pole forming a magnet brush and by narrowing a developer rising region in a developing region where a flux density attenuation ratio of the development pole is 40% or more. A half-value width of the flux density of the development pole is 22° or less and the flux density variation rate is 4.0 mT/Deg or more in a circumferential direction in a part where the flux density in at least half of that of a downstream side of a developer carrying direction from a peak magnetic force position of the development pole is 90% or less.