The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Sep. 18, 2003
Nobuhiro Ohkubo, Ikoma, JP;
Nobuhiro Ohkubo, Ikoma, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The laser semiconductor device includes a semiconductor substrate, a first clad layer of a first conductivity type, an active layer, a second clad layer of a second conductivity type, and a protective layer of the second conductivity type, and peak wavelength of photo luminescence of an active layer (window region) in a region near an end surface of a laser resonator is smaller than peak wavelength of photo luminescence of the active layer (active region) in an inner region of the laser resonator. In the active layer in the region near the end surface of the laser resonator, first impurity atoms of a second conductivity and second impurity atoms of the second conductivity exist mixedly, with the concentration of the first impurity atoms being higher than that of the second impurity atoms.