The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jun. 09, 2004
Hsu Kai (Karl) Yang, Pleasanton, CA (US);
Xizeng Shi, Fremont, CA (US);
Po-kang Wang, San Jose, CA (US);
Bruce Yee Yang, Pleasanton, CA (US);
Hsu Kai (Karl) Yang, Pleasanton, CA (US);
Xizeng Shi, Fremont, CA (US);
Po-Kang Wang, San Jose, CA (US);
Bruce Yee Yang, Pleasanton, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Applied Spintronics Technology, Inc., Milpitas, CA (US);
Abstract
A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.