The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Mar. 02, 2004
Toshimasa Suzuki, Tokyo, JP;
Yuji Nishi, Tokyo, JP;
Masayuki Fujimoto, Hamamatsu, JP;
Nobuyoshi Awaya, Osaka, JP;
Kohji Inoue, Osaka, JP;
Keizo Sakiyama, Osaka, JP;
Toshimasa Suzuki, Tokyo, JP;
Yuji Nishi, Tokyo, JP;
Masayuki Fujimoto, Hamamatsu, JP;
Nobuyoshi Awaya, Osaka, JP;
Kohji Inoue, Osaka, JP;
Keizo Sakiyama, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin filmforming the lower electrode layer includes columnar Pt crystal grainsA,B,C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groupsA,B,C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grainsA,B,C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groupsA,B,C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0), (1 1 0)and (1 1 1)planes.