The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jul. 25, 2001
Kenji Inage, Tokyo, JP;
Yoshihiro Kudo, Tokyo, JP;
Ken-ichi Takano, Tokyo, JP;
Koichi Terunuma, Tokyo, JP;
Yuzuru Iwai, Tokyo, JP;
Kenji Inage, Tokyo, JP;
Yoshihiro Kudo, Tokyo, JP;
Ken-ichi Takano, Tokyo, JP;
Koichi Terunuma, Tokyo, JP;
Yuzuru Iwai, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
A magnetoresisive device comprises an MR element, bias field applying layers located adjacent to the side portions of the MR element, and two electrode layers that feed a sense current to the MR element. The electrode layers overlap one of the surfaces of the MR element. The total overlap amount of the two electrode layers is smaller than 0.3 μm. The MR element is a spin-valve GMR element. The MR element incorporates a base layer, a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a cap layer that are stacked in this order. The pinned layer includes a nonmagnetic spacer layer, and two ferromagnetic layers that sandwich this spacer layer.