The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Mar. 04, 2004
Christine Ann Scales, Ottawa, CA;
Pierre Simon Joseph Berini, Ottawa, CA;
Christine Ann Scales, Ottawa, CA;
Pierre Simon Joseph Berini, Ottawa, CA;
Spectalis Corp., Nepean, CA;
Abstract
A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relatively low free charge carrier density, the material on at least one side of the strip comprising a semiconductor, the strip having finite width and thickness with dimensions such that optical radiation couples to the strip and propagates along the length of the strip as a plasmon-polariton wave, light for detection being coupled to one end of the strip to propagate along the strip as said plasmon-polariton wave, ohmic contact means applied to the semiconductor material and at least one electrode means connected to the strip for applying bias to the Schottky barrier and extracting a photodetector current corresponding to the light applied to the photodetector. Where the strip of material is a flat, thin strip, the device will be polarisation dependent. Substantially polarisation-independent operation maybe achieved by using a strip whose width is of the same order as its thickness.