The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jun. 21, 2004
Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
Tomoyuki Furuhata, Sakafu, JP;
Tomoyuki Furuhata, Sakafu, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Semiconductor devices including a non-volatile memory transistor and methods for manufacturing such semiconductor devices are described. One semiconductor device may include a silicon substratea floating gatedisposed above the silicon substratethrough a first dielectric layera second dielectric layerthat contacts at least a part of the floating gatea control gateformed over the second dielectric layerand a source regionand a drain regionformed in the silicon substrateA wiring layeris provided above the floating gateand the entirety of the floating gateis overlapped by the wiring layeras viewed in a plan view.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile