The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jun. 03, 2004
Applicant:
Ranbir Singh, Gaithersburg, MD (US);
Inventor:
Ranbir Singh, Gaithersburg, MD (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher source/drain blocking voltage. A backside gate is insulated from the channel region using a low doped layer of the opposite conductivity type than the channel region to support the rated blocking voltage of the device.