The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Oct. 07, 2003
Dong Suk Shin, Gyeonggi-do, KR;
Dong Suk Shin, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device wherein the lower portion of a contact hole is cleaned, and doped with an impurity for reducing contact resistance is disclosed. The method comprises: sequentially forming a buffer layer and an interlayer insulating film on a semiconductor substrate; etching the interlayer insulating film and the buffer layer to form a contact hole exposing the semiconductor substrate; performing a cleaning process of a lower portion of the contact hole; doping an impurity into the surface of the semiconductor substrate exposed by the contact hole; and forming a conductive layer filling the contact hole on the entire surface of the resulting structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile