The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2006

Filed:

Mar. 16, 2004
Applicants:

Hong-seong Son, Gyeonggi-do, KR;

Sang-rok Hah, Seoul, KR;

Il-goo Kim, Gyeonggi-do, KR;

Jun-hwan OH, Incheon-si, KR;

Inventors:

Hong-Seong Son, Gyeonggi-do, KR;

Sang-Rok Hah, Seoul, KR;

Il-Goo Kim, Gyeonggi-do, KR;

Jun-Hwan Oh, Incheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method for filling a hole with a metal, an insulating layer, a first mask layer and a second mask layer are successively formed on a semiconductor substrate. The first and second mask layers are etched using a photoresist pattern to form first and second masks. The first mask layer pattern is selectively etched using an etchant, the first mask layer pattern having a higher etching selectivity than the second layer pattern with respect to the etchant, to form a third mask layer pattern having a broadened opening. The insulating layer is etched using the second mask to form a hole in the insulating layer. A metal layer is formed in the hole and the third opening. The metal layer is planarized to form a metal plug buried in the hole without recesses or voids.


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