The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Oct. 05, 2004
Norio Yasuhara, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Kazutoshi Nakamura, Yokohama, JP;
Yusuke Kawaguchi, Miura-gun, JP;
Shinichi Hodama, Yokohama, JP;
Akio Nakagawa, Fujisawa, JP;
Norio Yasuhara, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Kazutoshi Nakamura, Yokohama, JP;
Yusuke Kawaguchi, Miura-gun, JP;
Shinichi Hodama, Yokohama, JP;
Akio Nakagawa, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first semiconductor region having a first conductivity type, a second semiconductor region formed on the first semiconductor region and having the first conductivity type, a third semiconductor region formed in a surface of the second semiconductor region and having a second conductivity type, a fourth semiconductor region formed in the surface of the second semiconductor region and having the second conductivity type, and a gate structure formed on the second and fourth semiconductor region. The semiconductor device further includes a conductive member arranged in the trench extending from a surface of the fourth semiconductor region to the first semiconductor region, the trench having one sidewall surface flush with a sidewall surface of the gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile