The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
May. 12, 2004
Junichi Konishi, Hyogo-ken, JP;
Junichi Konishi, Hyogo-ken, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.