The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jan. 22, 2003
Yoshihiko Horio, Saitama, JP;
Tetsuya Fujiwara, Kanagawa, JP;
Kazuyuki Aihara, Chiba, JP;
Japan Science and Technology Agency, Kawaguchi, JP;
Abstract
An N-shaped nonlinear resistor circuit using floating gate MOSFETs; to realize various N-shaped characteristics that can be approximated by piecewise linear functions of third to seventh orders and further to realize N-shaped V-I characteristics that can variously change those characteristics by use of external voltages. A Λ-type nonlinear resistor circuit (1) and a V-type nonlinear resistor circuit (2) using multi-input floating gate MOSFETs are connected in parallel, and the currents of the Λ-type and V-type nonlinear resistor circuits are added together, thereby providing various N-shaped voltage-current characteristics.