The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Dec. 23, 2003
Valentina Tessa Contin, Milan, IT;
Carlo Caimi, Cinisello Balsamo, IT;
Davide Merlani, Monza, IT;
Paolo Caprara, Milan, IT;
Valentina Tessa Contin, Milan, IT;
Carlo Caimi, Cinisello Balsamo, IT;
Davide Merlani, Monza, IT;
Paolo Caprara, Milan, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
An MOS device has a stack and a passivation layer covering the stack. The stack is formed by a first polysilicon region and by a second polysilicon region arranged on top of one another and separated by an intermediate dielectric region. An electrical connection region, formed by a column structure substantially free of steps, extends through the passivation layer, the second polysilicon region and the intermediate dielectric region, and terminates in contact with the first polysilicon region so as to electrically contacting the first polysilicon region and the second polysilicon region. Fabrication of the electrical connection region requires just one mask.