The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Dec. 01, 2003
Carlos Augusto, Lisboa, PT;
Carlos Augusto, Lisboa, PT;
Quantum Semiconductor, LLC, San Jose, CA (US);
Abstract
A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG) and a source mid-gap value (EGM), the source layer having a source Fermi-Level (EF). A drain layer has a drain Fermi-Level (EF). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG) and a channel mid-gap value (EGM), the channel layer having a channel Fermi-Level (EF). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF). A gate electrode has a gate electrode Fermi-Level (EF). The source band-gap is substantially narrower (EG) than the channel band-gap (EG). The source contact Fermi-Level (EF), the source Fermi-Level (EF), the channel Fermi-Level (EF), the drain Fermi-Level (EF) and the gate electrode Fermi-Level (EF) are equal to the source mid-gap value (EGM) and the channel mid-gap value (EGM), within a predetermined tolerance value, when no voltage is applied to the device.