The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Apr. 06, 2004
Dennis Darcy Buss, Dallas, TX (US);
Dennis Darcy Buss, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device (). The device () comprises a tensile-strained silicon layer () located on a silicon-germanium substrate () and silicon-germanium source/drain structures () located on or in the tensile-strained silicon layer (). The PMOS device () further includes a channel region () located between the silicon-germanium source/drain structures () and within the tensile-strained silicon layer (). The channel region () has a compressive stress () in a direction parallel to an intended current flow () through the channel region (). Other embodiments of the present invention include a method of manufacturing the PMOS device () and a MOS device ().