The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Nov. 20, 2003
Kiyoshi Morimoto, Hirakata, JP;
Hideyuki Tanaka, Hirakata, JP;
Takashi Ohtsuka, Toyonaka, JP;
Akihito Miyamoto, Hirataka, JP;
Kiyoshi Morimoto, Hirakata, JP;
Hideyuki Tanaka, Hirakata, JP;
Takashi Ohtsuka, Toyonaka, JP;
Akihito Miyamoto, Hirataka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention relates to a non-volatile memory comprising: a first electrode (); a second electrode (); and a phase-change recording medium () sandwiched between the first electrode () and the second electrode (), in which resistance value is varied by applying an electrical pulse across the first electrode () and the second electrode (), at least one of the first electrode () and the second electrode () contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium () is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.