The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2006

Filed:

Oct. 29, 2003
Applicants:

Young-ho Kim, Seoul, KR;

Yoon Chung, Seoul, KR;

Hyoung-jun Jeon, Seoul, KR;

Hwan-pil Park, Gwangju Metropolitan, KR;

Chong-seung Yoon, Seoul, KR;

Inventors:

Young-Ho Kim, Seoul, KR;

Yoon Chung, Seoul, KR;

Hyoung-Jun Jeon, Seoul, KR;

Hwan-Pil Park, Gwangju Metropolitan, KR;

Chong-Seung Yoon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for forming quantum dots, comprising the steps of (a) mixing a dielectric precursor diluted in a solvent and a metal powder and stirring the mixture, (b) coating the mixture onto a substrate, and (c) heating the resultant substrate. The method can easily control the size, density and uniformity of metal oxide quantum dots.


Find Patent Forward Citations

Loading…