The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Dec. 18, 2003
Applicant:
Choon Kun Ryu, Seoul, KR;
Inventor:
Choon Kun Ryu, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention is provided to a semiconductor device and a method of fabricating the same. A spacer consisting of SiCxHy or SiOCxHy having a low dielectric constant is formed at the sidewall of a trench or a hole that is formed in an interlayer insulating film. It is therefore possible to reduce the dielectric constant while reducing critical dimension loss of the trench or the hole. Therefore, the present invention has advantages that it can enhance the operating speed of the device by minimizing parasitic capacitance and prohibiting RC delay and crosstalk.