The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Aug. 25, 2003
Satoshi Yamamoto, Tokyo, JP;
Takashi Takizawa, Tokyo, JP;
Tatsuo Suemasu, Tokyo, JP;
Masahiro Katashiro, Hachioji, JP;
Hiroshi Miyajima, Hachioji, JP;
Kazuya Matsumoto, Kamiina-gun, JP;
Toshihiko Isokawa, Ina, JP;
Satoshi Yamamoto, Tokyo, JP;
Takashi Takizawa, Tokyo, JP;
Tatsuo Suemasu, Tokyo, JP;
Masahiro Katashiro, Hachioji, JP;
Hiroshi Miyajima, Hachioji, JP;
Kazuya Matsumoto, Kamiina-gun, JP;
Toshihiko Isokawa, Ina, JP;
Fujikura Ltd., Tokyo, JP;
Olympus Optical Co., Ltd., Tokyo, JP;
Abstract
A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide filmon a principal surface of the semiconductor substrate, forming a small holethrough the semiconductor substratefrom the opposite the step to reach to the first silicon oxide film, covering the inside of the small holewith the second silicon oxide film, forming a first thin metal filmand a second thin metal filmon the first silicon oxide film, partially removing the first silicon oxide filmcorresponding to the end of the small hole, and filling the small holewith the conductive material to form a through hole electrode