The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Nov. 15, 2002
Applicant:
Masaki Yoshizawa, Kanagawa, JP;
Inventor:
Masaki Yoshizawa, Kanagawa, JP;
Assignee:
Sony Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a mask able to reduce the thickness of a membrane and maintain the mask strength and a method of producing a semiconductor device able to form a fine pattern with a high accuracy and a method of producing the mask. A mask comprising a thin film, holes formed at the thin film through which a charged particle beam (preferably an electron beam) passes, a support layer formed at one side of the thin film, and apertures formed at a larger size than the holes at least at portions of said holes of said support layer and a method of producing the same and a method of producing a semiconductor device including a lithography step using the same.