The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Apr. 07, 2004
Applicant:
Mao-yi Chang, Taipei, TW;
Inventor:
Mao-Yi Chang, Taipei, TW;
Assignee:
Au Optronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention uses higher protrusions of an initially formed silicon layer as crystalline seeds in the subsequent crystallization step so that the newly-formed polysilicon thin film has smoother and bigger silicon grains, and has lesser density of protrusions. Furthermore, the polysilicon thin film of the present invention can be applied to form polysilicon thin film transistors or other devices.