The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Dec. 18, 2003
Yong Soo Cho, Daejeon-Metropolitan, KR;
Yong Soo Cho, Daejeon-Metropolitan, KR;
DongbuAnam Semiconductor Inc., Seoul, KR;
Abstract
The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, a sidewall layer containing impurities is formed on a part of gate electrode, thereby forming a low concentration source/drain electrode for a lightly doped drain (LDD) structure not by conventional ion implanting process but by out diffusion of impurities contained in the sidewall. Thus, it is made possible to minimizes damages of substrate due to ion implanting process, since the number of process of ion implantation may be naturally minimized through the above mentioned ion implantation process according to the present invention. Also, it is made possible for gate electrode to maintain its size independently, regardless of distance between source electrode and drain electrode, by excluding a role of ion implanting mask which has been performed by gate electrode.