The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2006

Filed:

Sep. 29, 2004
Applicants:

Woong Kwon Kim, Kunpo-shi, KR;

Heung Lyul Cho, Suwon-shi, KR;

Seung Hee Nam, Anyang-shi, KR;

Inventors:

Woong Kwon Kim, Kunpo-shi, KR;

Heung Lyul Cho, Suwon-shi, KR;

Seung Hee Nam, Anyang-shi, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor array substrate, and its manufacturing method, that is made using a three-round mask process. Gate patterns, each of which includes a gate line consisting of a transparent metal pattern and a gate metal pattern, a gate electrode, a lower gate pad, a lower data pad, and a pixel electrode are formed using a first mask process. A second mask process forms a gate insulating pattern and a semiconductor pattern. A third mask process forms source and drain patterns, each of which includes a data line, a source electrode, a drain, electrode, an upper gate pad and an upper data pad. Additionally, the gate metal pattern on an upper portion of the pixel electrode is removed.


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