The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
May. 30, 2003
Tae Song Kim, Seoul, KR;
Hyung Joon Kim, Seoul, KR;
Jeong Hoon Lee, Seoul, KR;
Ji Yoon Kang, Seoul, KR;
Tae Song Kim, Seoul, KR;
Hyung Joon Kim, Seoul, KR;
Jeong Hoon Lee, Seoul, KR;
Ji Yoon Kang, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
In a cantilever sensor and a fabrication thereof, by forming piezoelectric films on the same surface, it is possible to sense various information by an electric measuring method. The cantilever sensor comprises a first silicon nitride film formed onto the top surface of a silicon substrate; a silicon oxide film formed onto the first silicon nitride film; a lower electrode formed onto the silicon oxide film; a first piezoelectric film and a second piezoelectric film formed onto the lower electrode, the second piezoelectric film formed out of contact with the first piezoelectric film; an upper electrode respectively formed onto the first and second piezoelectric films; a protecting film formed onto the silicon oxide film, the lower electrode, the first and second piezoelectric films and the upper electrode; a first and a second openings respectively formed on the protecting film on the upper electrode and the protecting film on the lower electrode; a first and a second contact pads respectively formed at the first and second openings; a T-shaped sensing portion formed at the end of a cantilever; a second silicon nitride film formed on the bottom surface of the silicon substrate.