The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jan. 23, 2003
Applicants:
IN Kwon Jeong, Cupertino, CA (US);
Yong Bae Kim, Cupertino, CA (US);
Jungyup Kim, San Jose, CA (US);
Inventors:
In Kwon Jeong, Cupertino, CA (US);
Yong Bae Kim, Cupertino, CA (US);
Jungyup Kim, San Jose, CA (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.