The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jul. 27, 2004
Jin Jang, Seoul, KR;
Soo-young Yoon, Daejeon, KR;
Jae-young OH, Jeju-shi, KR;
Woo-sung Shon, Seoul, KR;
Seong-jin Park, Seoul, KR;
Jin Jang, Seoul, KR;
Soo-Young Yoon, Daejeon, KR;
Jae-Young Oh, Jeju-shi, KR;
Woo-Sung Shon, Seoul, KR;
Seong-Jin Park, Seoul, KR;
LG.Philips LCD Co., Ltd., Seoul, KR;
Abstract
The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.