The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Dec. 14, 2001
Katsumi Nakagawa, Kyoto, JP;
Tetsuro Saito, Kanagawa, JP;
Tatsumi Shoji, Kanagawa, JP;
Takehito Yoshino, Kyoto, JP;
Shoji Nishida, Nara, JP;
Noritaka Ukiyo, Nara, JP;
Masaaki Iwane, Nara, JP;
Masaki Mizutani, Nara, JP;
Katsumi Nakagawa, Kyoto, JP;
Tetsuro Saito, Kanagawa, JP;
Tatsumi Shoji, Kanagawa, JP;
Takehito Yoshino, Kyoto, JP;
Shoji Nishida, Nara, JP;
Noritaka Ukiyo, Nara, JP;
Masaaki Iwane, Nara, JP;
Masaki Mizutani, Nara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.