The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2006

Filed:

May. 10, 2004
Applicants:

Ryan Likeke Naone, Boulder, CO (US);

Andrew W. Jackson, Boulder, CO (US);

Leo M. F. Chirovsky, Superior, CO (US);

Inventors:

Ryan Likeke Naone, Boulder, CO (US);

Andrew W. Jackson, Boulder, CO (US);

Leo M. F. Chirovsky, Superior, CO (US);

Assignee:

Optical Communication Products, Inc., Woodland Hills, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 μm light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.


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