The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Nov. 12, 2003
Applicant:
Hirotsugu Honda, Kyoto, JP;
Inventor:
Hirotsugu Honda, Kyoto, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a heavily doped layerof p-type formed in the surface of an n-type wellan intermediately doped layerof p-type formed to adjoin and surround the heavily p-doped layerand an isolation regionformed to surround the heavily p-doped layerand the intermediately p-doped layerThe heavily p-doped layerhas a higher dopant concentration than the wellThe intermediately p-doped layerhas a higher dopant concentration than the welland a lower dopant concentration than the heavily p-doped layer