The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Jun. 30, 2004
Applicant:
Seon Yong Cha, Chungcheongbuk-do, KR;
Inventor:
Seon Yong Cha, Chungcheongbuk-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses an MRAM wherein a write word line is disposed between every other set of the word lines and a ground line is disposed between every other bit lines. This structure of MRAM in accordance with the present invention, Which is similar to folded bit line DRAM having a unit cell area of 8F2, allows read and write operation of MRAM with reduced number of required lines.
Cha, Seon. (2006). Method for manufacturing magnetic random access memory (U.S. Patent No. 7019370). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7019370
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile