The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2006

Filed:

Jun. 21, 2004
Applicants:

Benoît Froment, Grenoble, FR;

François Wacquant, Saint Ismier, FR;

Inventors:

Benoît Froment, Grenoble, FR;

François Wacquant, Saint Ismier, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor material is protected against the formation of a metal silicide by forming a layer of a silicon/germanium alloy on the material. The material which is protected belongs to a component of an integrated circuit comprising other components that have to be subjected to a siliciding operation. The method of protection includes depositing a layer of silicon/germanium alloy on the integrated circuit. The layer of silicon/germanium alloy is then removed from the areas to be silicided. A metal is then deposited on the structure and a metal silicide is formed therefrom. The unreacted metal and the metal/silicon/germanium ternary alloy that may have formed are removed, and the layer of silicon/germanium alloy is removed so as to expose the unsilicided component.


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