The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2006

Filed:

Jun. 18, 2004
Applicants:

Satoshi Aoki, Sayama, JP;

Masako Kimura, Sayama, JP;

Masanori Kosugi, Minato-ku, JP;

Inventors:

Satoshi Aoki, Sayama, JP;

Masako Kimura, Sayama, JP;

Masanori Kosugi, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of producing a light absorbing layer of CIGS for a solar cell by forming a precursor film on a back electrode and treating the precursor film in a selenium atmosphere, wherein an alkali layer is formed on the back electrode by dipping the back electrode in an aqueous solution containing alkali metals and drying and then a laminated precursor is formed on the alkali layer. By applying this method, the alkali layer whose components of Ia-group elements are diffused into the light absorbing layer to improve power conversion efficiency thereof can be easily formed with no fear of denaturing the back electrode and peeling of the layer at the boundary between the light absorbing layer and the back electrode.


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