The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Mar. 24, 2003
Steven M. Leibiger, Falmouth, ME (US);
Laurence M. Szendrei, Gray, ME (US);
Mark A. Doyle, Lyman, ME (US);
Steven M. Leibiger, Falmouth, ME (US);
Laurence M. Szendrei, Gray, ME (US);
Mark A. Doyle, Lyman, ME (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A process for forming a bipolar transistor where the doping implantation of the extrinsic base regions does not affect the emitter doping levels. The techniques is to not remove the photoresist layer used to define the poly emitter contact. The photoresist layer for defining the extrinsic base regions overlays the photoresist layer over the emitter poly. When the base photoresist is processed to expose the base regions the photoresist over the emitter poly remains in tact. In this arrangement the base implantation is prevented from driving through the emitter poly and affecting the doping levels in the emitter.