The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
May. 28, 2003
Tomoyuki Kitamura, Kanagawa, JP;
Tomoyuki Kitamura, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A broad area semiconductor laser device is provided having an NFP with top hat shaped profiles for the P wave and the S wave, which result from polarized beam splitting of the emitted light. The broad area semiconductor laser device of the present invention has the same structure as the broad area semiconductor laser device of the prior art, except that the composition of an etch stop layer is different. The semiconductor laser device includes an n-AlGaAs first clad layer, an active layer including an AlGaAs optical guide layer and an AlGaAs quantum well layer, a 0.3 μm thick p-AlGAs lower second clad layer, an AlGaAs etch stop layer, a p-AlGaAs upper second clad layer, and a p-GaAs contact layer, which form a laminated structure on top of an n-GaAs substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile