The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Apr. 25, 2003
Choong-sun Park, Kyunggi-do, KR;
Hyung-dong Kim, Kyunggi-do, KR;
Sang-seok Kang, Kyounggi-do, KR;
Jong-hyun Choi, Seoul, KR;
Yong-hwan Jung, Seoul, KR;
Choong-Sun Park, Kyunggi-do, KR;
Hyung-Dong Kim, Kyunggi-do, KR;
Sang-Seok Kang, Kyounggi-do, KR;
Jong-Hyun Choi, Seoul, KR;
Yong-Hwan Jung, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
The invention relates to a method and apparatus for controlling a high voltage generator during wafer burn-in. The method includes generating an enable signal for enabling a high voltage generator responsive to a mode signal, e.g., a wafer bum-in test mode. The method provides an external voltage to a semiconductor memory device through a pad responsive to the enable signal. The method varies a high voltage level being output from the high voltage generator in response to a reference voltage level.