The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2006

Filed:

Jul. 08, 2002
Applicants:

Koichi Ikeda, Kanagawa, JP;

Takashi Shimada, Kanagawa, JP;

Inventors:

Koichi Ikeda, Kanagawa, JP;

Takashi Shimada, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 26/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A MEMS element is constituted as a light modulation element for constituting a GLV device, and it has the same constitution as a conventional MEMS element except for differing in the structure of a bridge member of a membrane. The membrane comprises SiN film of, for example, 100 nm in thickness laminated thereon, and a combined light reflective film and membrane-side electrode composed of an Al film of 100 nm in thickness provided on the bridge member. The SiOfilm may be a SiOfilm formed by thermal oxidation of a sacrificing layer formed of polysilicon or may be a SiOfilm formed by a CVD method or a PVD method.


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