The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Jan. 14, 2004
Applicants:
Jae-hwang Kim, Seoul, KR;
Hee-seog Jeon, Kyungki-do, KR;
Inventors:
Jae-Hwang Kim, Seoul, KR;
Hee-Seog Jeon, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell and a method for fabricating same. The memory cell comprises a source region and a drain region formed in a semiconductor substrate and a channel region defined between the source and drain regions. Charge storage layers are formed the channel region. A gate insulating layer is formed on the channel region between the charge storage layers, and a gate electrode is formed on the gate insulating layer and the charge trapping storage layers.