The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Jun. 27, 2002
Applicants:
Shiro Sakai, Tokushima, JP;
Tao Wang, Tokushima, JP;
Inventors:
Shiro Sakai, Tokushima, JP;
Tao Wang, Tokushima, JP;
Assignees:
Nitride Semiconductors Co., Ltd., Naruto, JP;
Shiro Sakai, Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of the surface of the GaN layer on a surface of the GaN layer which is not planar. For a laser, the AlGaN-based layers serve as clad layers which sandwich the light emitting layer.