The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Nov. 03, 2003
Christopher F. Lyons, Fremont, CA (US);
Mark S. Chang, Los Altos, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Patrick K. Cheung, Sunnyvale, CA (US);
Minh V. Ngo, Fremont, CA (US);
Jane V. Oglesby, Mountain View, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Mark S. Chang, Los Altos, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Patrick K. Cheung, Sunnyvale, CA (US);
Minh V. Ngo, Fremont, CA (US);
Jane V. Oglesby, Mountain View, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cells can have a bit line of the wafer as the first electrode and operate with a second formed electrode to activate a portion of an organic matter that is formed there between.